SiGe:C BiCMOS Technology for your products
IHP Solutions offers industrial customers access to IHP’s powerful SiGe:C BiCMOS technologies and special integrated RF modules.
The technologies provide integrated HBTs with cut-off frequencies of up to 500 GHz and are especially well suited for applications in the high GHz bands for wireless communication or radar applications.
The comprehensive technology offering encompasses:
• SiGe:C BiCMOS technologies in 0.25 µm and 0.13 µm.
• Backend metal layers:
o Number of thin layers: 3 (for 0.25 µm); 5 (for 0.13 µm) thin
o Number of thick layers: 2 (TM1: 2 μm, TM2: 3 μm).
• Design Kits: Cadence-based for mixed signal, ADS-based for high frequency designs
• Comprehensive library of reusable blocks and IPs for wireless and broadband
o H3P: Additional pnp-HBTs with fT/fmax = 90/120 GHz for complementary bipolar applications
o RFMEMS: optional integrated capacitive RFMEMS switch devices for frequencies between 40 GHz to 150 GHz
o LBE: Localized Backside Etching to remove silicon locally to improve passive performance
o PIC: Additional photonic design layers together with BiCMOS BEOL layers on SOI wafers
For more details on technology check IHP’s technology information
For more information please contact:
Dr. Rene Scholz
Vice President Industry Services
Im Technologiepark 25
15236 Frankfurt (Oder)
Phone: +49 335 5625 647
Fax: +49 335 5625 327